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DRA821U4...ALM 数据表(PDF) 104 Page - Texas Instruments

部件名 DRA821U4...ALM
功能描述  DRA821 Jacinto™ Processors
PDF  252 Pages
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制造商  TI [Texas Instruments]
网页  http://www.ti.com
标志 TI - Texas Instruments

DRA821U4...ALM 数据表(HTML) 104 Page - Texas Instruments

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7.6.7 LVCMOS Electrical Characteristics
Over recommended operating conditions (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
BALL NAMES: ALL other IOs
BALL NUMBERS: ALL other IOs
1.8-V MODE
VIL
Input Low Voltage
0.35 × VDD(1)
V
VILSS
Input Low Voltage Steady State
0.3 × VDD(1)
V
VIH
Input High Voltage
0.65 × VDD(1)
V
VIHSS
Input High Voltage Steady State
0.85 × VDD(1)
V
VHYS
Input Hysteresis Voltage
150
mV
IIN
Input Leakage Current.
VI = 1.8 V or 0 V
±10
µA
RPU
Pull-up Resistor
15
22
30
kΩ
RPD
Pull-down Resistor
15
22
30
kΩ
VOL
Output Low Voltage
0.45
V
VOH
Output High Voltage
VDD(1) - 0.45
V
IOL
Low Level Output Current
VOL(MAX)
3
mA
IOH
High Level Output Current
VOH(MIN)
3
mA
3.3-V MODE
VIL
Input Low Voltage
0.8
V
VILSS
Input Low Voltage Steady State
0.6
V
VIH
Input High Voltage
2.0
V
VIHSS
Input High Voltage Steady State
2.0
V
VHYS
Input Hysteresis Voltage
150
mV
IIN
Input Leakage Current.
VI = 3.3 V or 0 V
±10
µA
RPD
Pull-down Resistor
15
22
30
kΩ
VOL
Output Low Voltage
0.4
V
VOH
Output High Voltage
2.4
V
IOL
Low Level Output Current
VOL(MAX)
5
mA
IOH
High Level Output Current
VOH(MIN)
6
mA
(1)
VDDSHV stands for corresponding power supply. For more information on the power supply name and the corresponding ball, see
Table 6-1, POWER column.
7.6.8 USB2PHY Electrical Characteristics
Note
USB0 Electrical Characteristics are compliant with Universal Serial Bus Revision 2.0 Specification
dated April 27, 2000 including ECNs and Errata as applicable.
DRA821U-Q1
SPRSP57D – APRIL 2020 – REVISED DECEMBER 2022
www.ti.com
104
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Copyright © 2022 Texas Instruments Incorporated
Product Folder Links: DRA821U-Q1



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