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H5GQ2H24AFR-R0C 数据表(PDF) 113 Page - Hynix Semiconductor

部件名 H5GQ2H24AFR-R0C
功能描述  2Gb (64Mx32) GDDR5 SGRAM
PDF  172 Pages
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制造商  HYNIX [Hynix Semiconductor]
网页  http://www.skhynix.com/kor/main.do
标志 HYNIX - Hynix Semiconductor

H5GQ2H24AFR-R0C 数据表(HTML) 113 Page - Hynix Semiconductor

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This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any
responsability for use of circuits described. No patent licenses are implied.
Rev. 1.2 /Nov. 2011
113
H5GQ2H24AFR
1. Minimum CKE# pulse width must satisfy tCKE.
2. After issuing PowerDown command, two more NOPs should be issued.
 5.18. COMMAND TRUTH TABLES
Notes:
1.  CKE#n is the logic state of CKE# at clock edge n; CKE#n‐1 was the state of CKE# at the previous clock edge.
2.  Current state is the state of the GDDR5 SGRAM immediately prior to clock edge n.
3.  COMMANDn is the command registered at clock edge n, and ACTIONn is a result of COMMANDn.
4.  All states and sequences not shown are illegal or reserved.
5.  DESELECT or NOP commands should be issued on any clock edges occurring during the tXSRW period. A minimum of tLK is 
needed for the PLL to lock before applying a READ or WRITE command if the PLL was disabled.
Table 28  Pin States During Power Down
Pin
LP2
State
EDC
WCK
‘Hold’
no WCK
High
DQ/DBI#
x
ODT
ADR/CMD
x
ODT
CKE#
x
ODT (Driven High by Controller)
WCK/WCK#
x
ODT
Table 29  Truth Table – CKE#
CKE#n‐1
CKE#n
CURRENT 
STATE
COMMANDn
ACTIONn
NOTES
H
H
Power‐Down
X
Maintain Power‐Down
H
H
Self Refresh
X
Maintain Self Refresh
H
L
Power‐Down
DESELECT or NOP
Exit Power‐Down
H
L
Self Refresh
DESELECT or NOP
Exit Self Refresh
5
L
H
All Banks Idle
DESELECT or NOP
Precharge Power‐Down Entry
L
H
Bank(s) Active
DESELECT or NOP
Active Power‐Down Entry
L
H
All Banks Idle
REFRESH
Self Refresh Entry
L
L
See <Link>Table 30 and 
<Link>Table 31
1, 2, 3



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