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H5GQ2H24AFR-R0C 数据表(PDF) 155 Page - Hynix Semiconductor |
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H5GQ2H24AFR-R0C 数据表(HTML) 155 Page - Hynix Semiconductor |
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155 / 172 page ![]() This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any responsability for use of circuits described. No patent licenses are implied. Rev. 1.2 /Nov. 2011 155 H5GQ2H24AFR Tables 51, 52 and 53 below provide information for WRITE timings. . Table 51. WCK-to-Data WRITE Timing Sensitivity to VDDQ Parameter Symbol Values Units Notes WCK2DQI Sensitivity to variations in VDDQ for zone_VQ1 PLL on tI2VQSensZ1 TBD ps/V a,b a. Calculation of tI2VQSensZ1 is performed as follows: tI2VQSensZ1 equals the quantity (tWCK2DQI(Zone_VQ1(max)) ‐ tWCK2DQI(Zone_VQ1(min))) divided by (VDDQ(Zone_VQ1(max)) ‐ VDDQ(Zone_VQ1(min))) = (tWCK2DQI(VDDQ(max)) ‐ tWCK2DQI(VDDQ(min))) / (VDDQ(max) ‐ VDDQ(min)). b. VDD(typ), Tcase = 85°C, worst‐case process corner. PLL off TBD Table 52. WCK-to-Data WRITE Timing Sensitivity to VDD Parameter Symbol Values Units Notes WCK2DQI Sensitivity to variations in VDD for zone_VD1 PLL on tI2VDSensZ1 TBD ps/V a,b a. Calculation of tO2VDSensZ1 is performed as follows: tI2VDSensZ1 equals the quantity (tWCK2DQI(Zone_VD1(max)) ‐ tWCK2DQI(Zone_VD1(min))) divided by (VDD(Zone_VD1(max)) ‐ VDD(Zone_VD1(min))) = (tWCK2DQI(VDD(max)) ‐ tWCK2DQI(VDD(min))) / (VDD(max) ‐ VDD(min)). b. VDDQ(typ), Tcase = 85°C, worst‐case process corner. PLL off TBD Table 53. WCK-to-Data WRITE Timing Sensitivity to Tcase Parameter Symbol Values Units Notes WCK2DQI Sensitivity to variations in Tcase for zone_T1 PLL on tI2TSensZ1 TBD ps/°C a,b a. Calculation of tI2TSensZ1 is performed as follows: tI2TSensZ1 equals the quantity (tWCK2DQI(Zone_T1(max)) ‐ tWCK2DQI(Zone_T1(min))) divided by (Tcase(Zone_T1(max)) ‐ Tcase(Zone_T1(min))) = (tWCK2DQI(Tcase(max)) ‐ tWCK2DQI(Tcase(min))) / (Tcase(max) ‐ Tcase(min)). b. VDDQ(typ), VDD(typ), worst‐case process corner. PLL off TBD |
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